Microwave dielectric properties of Ti3SiC2 powders synthesized by solid state reaction

Ti3SiC2 powders were synthesized by the solid state reaction in a vacuum using Ti/Si/TiC mixture powders as the starting materials. X-ray diffraction, scanning electron microscopy and energy-dispersive spectroscopy were utilized in analyzing phase, morphology, and chemical composition of the prepared powders, respectively. It was found that the powder synthesized at 1350 °C had the higher purity of Ti3SiC2. The dielectric permittivities of Ti3SiC2 samples were determined in the frequency range of 8.2–12.4 GHz. Results showed that the sample with higher purity of Ti3SiC2 had the greater real part of complex permittivity ε′ and dielectric loss tan δ, indicating a good application prospect in microwave absorbing materials. The mechanism of microwave dielectric loss for Ti3SiC2 was discussed.