Title of article
Preparation and energy-storage performance of PLZT antiferroelectric thick films via sol–gel method
Author/Authors
Yunying Liu، نويسنده , , Ying Wang، نويسنده , , Xihong Hao، نويسنده , , Jinbao Xu، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2013
Pages
4
From page
513
To page
516
Abstract
In this work, sol–gel-derived Pb0.97La0.02(Zr0.97Ti0.03)O3(PLZT 2/97/3) antiferroelectric (AFE) thick films were fabricated on LaNiO3-bottom electrodes through a two-step heat-treatment process. The effects of the heat-treatment process on the crystalline structure and the energy-storage performance of the AFE films were investigated in detail. While all the PLZT 2/97/3films crystallized into a pure perovskite phase, the film pyrolyzed at 600 °C shows a relatively more homogeneous surface morphology. As a result, the film pyrolyzed at 600 °C possesses the highest energy-storage efficiency of 64.4%. However, the film pyrolyzed at a lower temperature exhibits a larger energy storage density because of its large saturated polarization.The maximum energy storage density of 20.1 J/cm3was obtained at 1158 kV/cm for the films pyrolyzed at 550 °C.
Keywords
A. Sol–gel processes , C. Dielectric properties , D. PLZT , E. Capacitors
Journal title
Ceramics International
Serial Year
2013
Journal title
Ceramics International
Record number
1277016
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