Resistive switching properties of TiO2 film for flexible non-volatile memory applications

Flexible electronics attracts much attention due to its advantages of flexibility and light weight. The resistive switching memory fabricated at low temperature with good performance is possibly used in the flexible electronics. In this work, an Al/TiO2/Al structural device is successfully fabricated on a flexible substrate at room temperature for the first time. The resistive switching properties of the flexible device are investigated. A possible resistive switching mechanism is proposed. The non-volatility of the flexible device is also demonstrated. Based on the experimental results, the proposed flexible device is possibly used in flexible non-volatile memory.