Dielectric properties of Ti substituted Bi2−xTixO3+x/2 ceramics

(1−x)Bi2O3(x)TiO2 (x=0.05, 0.10, 0.15) materials were prepared by a conventional solid-state reaction technique. Dielectric properties of the materials were investigated using an LCR meter in the frequency range 20–106 Hz over the temperature range 100–500 °C. Both dielectric constant and loss tangent decreased with increasing Ti content in the present system. It was observed that dielectric relaxation peaks shift to a higher frequency with increasing temperature. Using the electric modulus equations, the relaxation process was evaluated and a parameter α (0≤α<1) was extracted. Furthermore, the relaxation time as a function of temperature was calculated by an Arrhenius plot. A dielectric constant of ∼54 was observed for sample x=0.05 due to its smaller grains and presence of higher defects.