Title of article :
Heterogeneous behavior of PSII in soybean (Glycine max) leaves with identical PSII photochemistry efficiency under different high temperature treatments
Author/Authors :
Pengmin Li، نويسنده , , Lailiang Cheng، نويسنده , , Huiyuan Gao، نويسنده , , Chuangdao Jiang، نويسنده , , Tao Peng، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Abstract :
The purpose of this study is to demonstrate the heterogeneous behavior of PSII in soybean (Glycine max) leaves and identical maximum PSII photochemistry efficiency (FV/FM) under different high temperature treatments. We observed that, with an identical decrease in FV/FM in soybean leaves caused by different high temperature treatments, chlorophyll a fluorescence differed significantly, indicating different behaviors in the photosynthetic apparatus. The quantitative analysis showed that, with an identical FV/FM, leaves treated at 48 °C showed a higher WK, an indicator of damage to the oxygen-evolving complex along with a lower O2 evolution rate compared with leaves treated at 45 °C. This demonstrated that the donor side of PSII was damaged more severely at 48 °C than at 45 °C despite the same decrease in FV/FM in the two heat-treated leaves. The ratios of QA- and QB-reducing PSII reaction centers to total PSII reaction centers were both lower in leaves treated at 48 °C than in leaves treated at 45 °C with an identical FV/FM, indicating that the acceptor side of PSII was also more damaged by heat treatment at 48 °C than at 45 °C. However, when damage to the donor side of PSII was similar in leaves treated at two different temperatures, the acceptor side of PSII was damaged less severely at 48 °C, which accounted for higher electron transport rate at the acceptor side of PSII in leaves treated at 48 °C than in leaves treated at 45 °C.
Keywords :
FV/FM , Heterogeneous behavior of PSII , high temperature , Chlorophyll a fluorescence transient , Donor and acceptor side
Journal title :
Journal of Plant Physiology
Journal title :
Journal of Plant Physiology