Al thermomigration applied to the formation of deep junctions for power device insulation

An alternative method for creating total vertical junction insulation of power devices is presented. It involves the thermomigration of melted Al/Si. The method is first theoretically presented together with the specifically designed rapid thermal processor used in the experiments. Physical and electrical results are then given showing the efficiency of the method in terms of thermal budget, surface consumption and voltage handling capability. The issue of manufacturability is finally addressed.