Hot carrier effects in polycrystalline silicon thin-film transistors: analysis of electrical characteristics and noise performance modifications

Hot-carrier effects on both the electrical characteristics and the noise performance in polycrystalline silicon thin film transistors are analysed. The devices were fabricated by using a combined solid phase crystallization (SPC) and excimer laser annealing (ELA) process, combining the beneficial aspects of the two techniques. Hot-carrier degradation results in the formation of both interface states, which have been evaluated through the analysis of the sheet conductance and of oxide traps near the insulator/semiconductor interface, as evidenced by the 1\ f noise measurements. Oxide traps are calculated evaluating the flat band voltage spectral density associated with interface charge fluctuations in the damaged part of the interface. A strong correlation between interface state and oxide trap densities has been found, suggesting a common origin for the generation mechanism of the two types of defects.