Title of article
ONO and NO interpoly dielectric conduction mechanisms
Author/Authors
Salvo، B. De نويسنده , , Ghibaudo، G. نويسنده , , Pananakakis، G. نويسنده , , Reimbold، G. نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
-234
From page
235
To page
0
Abstract
Interpoly stacked-dielectric conduction mechanisms are investigated. Extensive Si3N4 and SiO2 single-layer transport analysis leads to a clear multi-layer dielectric understanding. An improved carrier-separation model is proposed for a 35 A-thick SiO2 and applied to ONO results. NO electrical behavior is satisfactorily modelled under both gate polarities.
Keywords
Thermal benchmark IC , Measuring of thermal coupling in ICs , Dynamic thermal modeling of IC packages
Journal title
MICROELECTRONICS RELIABILITY
Serial Year
1999
Journal title
MICROELECTRONICS RELIABILITY
Record number
12882
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