Title of article :
Random telegraph signal noise instabilities in latticemismatched InGaAs/InP photodiodes
Author/Authors :
Pogany، D. نويسنده , , Guillot، G. نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Abstract :
Spontaneous and induced instabilities in the character of Random Telegraph Signal (RTS) noise are studied in photodetector arrays, fabricated on lattice-mismatched InGaAs/InP heterostructures. The disappearance and reappearance of the RTS noise as well as abrupt changes in the RTS noise amplitude and pulse complexity are investigated as a function of voltage and temperature. The RTS noise instabilities are explained in terms of structural transformation of complex multistable crystalline defects. © 1999 Elsevier Science Ltd. All rights reserved.
Keywords :
Silicon nitride , R.f. reactive sputtering , Interference filter , Oxygen resonance RBS
Journal title :
MICROELECTRONICS RELIABILITY
Journal title :
MICROELECTRONICS RELIABILITY