Title of article
Random telegraph signal noise instabilities in latticemismatched InGaAs/InP photodiodes
Author/Authors
Pogany، D. نويسنده , , Guillot، G. نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
-340
From page
341
To page
0
Abstract
Spontaneous and induced instabilities in the character of Random Telegraph Signal (RTS) noise are studied in photodetector arrays, fabricated on lattice-mismatched InGaAs/InP heterostructures. The disappearance and reappearance of the RTS noise as well as abrupt changes in the RTS noise amplitude and pulse complexity are investigated as a function of voltage and temperature. The RTS noise instabilities are explained in terms of structural transformation of complex multistable crystalline defects. © 1999 Elsevier Science Ltd. All rights reserved.
Keywords
Silicon nitride , Oxygen resonance RBS , Interference filter , R.f. reactive sputtering
Journal title
MICROELECTRONICS RELIABILITY
Serial Year
1999
Journal title
MICROELECTRONICS RELIABILITY
Record number
12914
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