Single transistor technique for interface trap density measurement in irradiated MOS devices

The effect of interface trap charge variation during measurement of the MOSFET current-voltage characteristic has been examined. Taking into account this effect, an interface trap density extraction technique is proposed. The transconductance degradation in this technique is caused not only by channel mobility decrease, but also by Id(Vg) curve distortion due lo interface trapped charge variation during measurement. The analytical and numerical models for the effect are developed. The experimental data on channel mobility and interface trap density vs total dose are shown. (C) 1999 Elsevier Science Ltd. All rights reserved.