• Title of article

    Modeling and measurement approaches for electrostatic discharge in semiconductor devices and ICs: an overview

  • Author/Authors

    Lee، J.C. نويسنده , , Croft، G.D. نويسنده , , Liou، J.J. نويسنده , , Young، W.R. نويسنده , , Bernier، J. نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1999
  • Pages
    -578
  • From page
    579
  • To page
    0
  • Abstract
    Electrostatic charges can be generated everywhere. When they are discharged through semiconductor devices and integrated circuits, an event called an electrostatic discharge (ESD), failure of electronics systems using these devices and ICs can occur. This paper first gives an overview of the ESD sources and models. Then the emphasis is placed on the modeling and measurements of the most commonly used of these models called the human body model (HBM). Various HBM protection circuits are examined to look at ways of preventing ICs from being damaged should ESD events occur. The issue of HBM measurements is also addressed so that the rapid transient associated with this ESD model can be accurately measured and characterized. © 1999 Elsevier Science Ltd. All rights reserved.
  • Keywords
    Electromigration , Microstructural analysis , Aluminum alloys , Resistance measurements
  • Journal title
    MICROELECTRONICS RELIABILITY
  • Serial Year
    1999
  • Journal title
    MICROELECTRONICS RELIABILITY
  • Record number

    12960