• Title of article

    Accelerated dielectric breakdown and wear out standard testing methods and structures for reliability evaluation of thin oxides

  • Author/Authors

    Vincent، E. نويسنده , , Ghibaudo، G. نويسنده , , Pananakakis، G. نويسنده , , Kies، R. نويسنده , , Papadas، C. نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1999
  • Pages
    -596
  • From page
    597
  • To page
    0
  • Abstract
    This paper describes the various methods used for the assessment of the breakdown and wear out properties of thin oxides currently employed in CMOS and EEPROM technologies. Standard procedures for breakdown and wear out testing are given in conjunction with the associated test structures required for their accomplishment. © 1999 Elsevier Science Ltd. All rights reserved.
  • Keywords
    Electromigration , Microstructural analysis , Resistance measurements , Aluminum alloys
  • Journal title
    MICROELECTRONICS RELIABILITY
  • Serial Year
    1999
  • Journal title
    MICROELECTRONICS RELIABILITY
  • Record number

    12961

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=12961