Title of article :
Cathodoluminescence and photoluminescence of amorphous silicon oxynitride
Author/Authors :
Wong، H. نويسنده , , Gritsenko، V.A. نويسنده , , Shavalgin، Yu.G. نويسنده , , Pundur، P.A. نويسنده , , Lau، W.M. نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
-714
From page :
715
To page :
0
Abstract :
The cathodoluminescence and photoluminescence of amorphous silicon oxynitride (a-SiOxNy) films with different compositions were measured for the first time in the near infrared to visible-ultraviolet range. The red band with energy at 1.8-1.9 eV. blue band with energy 2.7 eV, ultraviolet bands with energies 3.1, 3.4-3.6, 4.4-4.7, and 5.4 eV were observed in a-SiOxNy. The 1.8-1.9 eV band is attributed to the oxygen and nitrogen atoms with unpaired electrons and the 2.7 eV band is attributed to twofold coordinated silicon atoms with two electrons. The 5.4 eV shoulder is due to the peroxy radicals and other ultraviolet bands are supposed to be due to the Si-Si bonds, (C) 1999 Elsevier Science Ltd. All rights reserved.
Keywords :
Electromigration , Microstructural analysis , Aluminum alloys , Resistance measurements
Journal title :
MICROELECTRONICS RELIABILITY
Serial Year :
1999
Journal title :
MICROELECTRONICS RELIABILITY
Record number :
12981
Link To Document :
بازگشت