• Title of article

    Cathodoluminescence and photoluminescence of amorphous silicon oxynitride

  • Author/Authors

    Wong، H. نويسنده , , Gritsenko، V.A. نويسنده , , Shavalgin، Yu.G. نويسنده , , Pundur، P.A. نويسنده , , Lau، W.M. نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1999
  • Pages
    -714
  • From page
    715
  • To page
    0
  • Abstract
    The cathodoluminescence and photoluminescence of amorphous silicon oxynitride (a-SiOxNy) films with different compositions were measured for the first time in the near infrared to visible-ultraviolet range. The red band with energy at 1.8-1.9 eV. blue band with energy 2.7 eV, ultraviolet bands with energies 3.1, 3.4-3.6, 4.4-4.7, and 5.4 eV were observed in a-SiOxNy. The 1.8-1.9 eV band is attributed to the oxygen and nitrogen atoms with unpaired electrons and the 2.7 eV band is attributed to twofold coordinated silicon atoms with two electrons. The 5.4 eV shoulder is due to the peroxy radicals and other ultraviolet bands are supposed to be due to the Si-Si bonds, (C) 1999 Elsevier Science Ltd. All rights reserved.
  • Keywords
    Microstructural analysis , Aluminum alloys , Resistance measurements , Electromigration
  • Journal title
    MICROELECTRONICS RELIABILITY
  • Serial Year
    1999
  • Journal title
    MICROELECTRONICS RELIABILITY
  • Record number

    12982