Title of article :
FLIP-chip and "backside" techniques
Author/Authors :
Barton، D.L. نويسنده , , Bernhard-Hofer، K. نويسنده , , Jr، E.I. Cole نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Abstract :
State-of-the-art techniques for failure localization and design modification through bulk silicon are essential for multi-level metallization and new, flip chip packaging methods. The tutorial reviews the transmission of light through silicon, sample preparation, and backside defect localization techniques that are both currently available and under development. The techniques covered include emission microscopy, scanning laser microscope based techniques (electrooptic techniques, LIVA and its derivatives), and other non-IR based tools (FIB, e-beam techniques, etc.). © 1999 Elsevier Science Ltd. All rights reserved.
Keywords :
Electromigration , Microstructural analysis , Aluminum alloys , Resistance measurements
Journal title :
MICROELECTRONICS RELIABILITY
Journal title :
MICROELECTRONICS RELIABILITY