Study of Stress Induced Leakage Current by using high resolution measurements

A thorough characterization of stress-induced leakage currents (SILCs) for a l 0nm-thick oxide, by using the floating-gate technique, is presented. The obtained current is modeled by a volume-limited conduction mechanism. Experimental and model suggest that SILC conduction mechanism is the same in thin as well as in thick oxides. © 1999 Published by Elsevier Science Ltd. All rights reserved.