Title of article
Study of Stress Induced Leakage Current by using high resolution measurements
Author/Authors
Salvo، B. De نويسنده , , Ghibaudo، G. نويسنده , , Pananakakis، G. نويسنده , , Guillaumot، B. نويسنده , , Reimbold، G نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
-796
From page
797
To page
0
Abstract
A thorough characterization of stress-induced leakage currents (SILCs) for a l 0nm-thick oxide, by using the floating-gate technique, is presented. The obtained current is modeled by a volume-limited conduction mechanism. Experimental and model suggest that SILC conduction mechanism is the same in thin as well as in thick oxides. © 1999 Published by Elsevier Science Ltd. All rights reserved.
Keywords
Electromigration , Microstructural analysis , Aluminum alloys , Resistance measurements
Journal title
MICROELECTRONICS RELIABILITY
Serial Year
1999
Journal title
MICROELECTRONICS RELIABILITY
Record number
13004
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