Title of article
Mercury-probe characterisation of soft breakdown: effect of oxide thickness and measurement set-up
Author/Authors
Cacciato، A. نويسنده , , Evseev، S. نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
-902
From page
903
To page
0
Abstract
The breakdown of 4-7 nm gate oxides is investigated using fast-feedback Hg-probe measurements to perform Exponentially Ramped Current Stress (ERCS) tests. Soft breakdown is detected in oxides thinner than 5 nm. However, it is found that the detection of soft-breakdown during ERCS test depends on the measurement set-up. In particular, it can be completely suppressed by reducing the gate oxide capacitor area. The consequences of this result for correct routine assessment of gate oxide integrity in microelectronic manufacturing are discussed. © 1999 Elsevier Science Ltd. All rights reserved.
Keywords
Aluminum alloys , Microstructural analysis , Electromigration , Resistance measurements
Journal title
MICROELECTRONICS RELIABILITY
Serial Year
1999
Journal title
MICROELECTRONICS RELIABILITY
Record number
13037
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