Title of article :
Mercury-probe characterisation of soft breakdown: effect of oxide thickness and measurement set-up
Author/Authors :
Cacciato، A. نويسنده , , Evseev، S. نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
-902
From page :
903
To page :
0
Abstract :
The breakdown of 4-7 nm gate oxides is investigated using fast-feedback Hg-probe measurements to perform Exponentially Ramped Current Stress (ERCS) tests. Soft breakdown is detected in oxides thinner than 5 nm. However, it is found that the detection of soft-breakdown during ERCS test depends on the measurement set-up. In particular, it can be completely suppressed by reducing the gate oxide capacitor area. The consequences of this result for correct routine assessment of gate oxide integrity in microelectronic manufacturing are discussed. © 1999 Elsevier Science Ltd. All rights reserved.
Keywords :
Electromigration , Resistance measurements , Aluminum alloys , Microstructural analysis
Journal title :
MICROELECTRONICS RELIABILITY
Serial Year :
1999
Journal title :
MICROELECTRONICS RELIABILITY
Record number :
13038
Link To Document :
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