Cross-section analysis of electric devices by scanning capacitance microscope

Carrier influence of semiconductor devices is important as it affects the function of the device. In this experiment, the carrier density distribution in the cross-section of semiconductor device was analyzed by SCM: Scanning Capacitance Microscope which is one of the measuring mode of SPM: Scanning Probe Microscope. This paper describe measurement result of change in carrier density by the gate voltage at p channel area of CMOS device and its efficiency to investigating dopant profile on 16MDRAM cross-section. © 1999 Published by Elsevier Science Ltd. All rights reserved.