Title of article :
Effect of composition on the structural, optical and electrical properties of sprayed Sb2S3 thin films prepared from non-aqueous medium
Original Research Article
Author/Authors :
Effect of composition on the structural، نويسنده , , optical and electrical properties of sprayed Sb2S3 thin films prepared from non-aqueous medium
Original Research Article، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
Sb2S3, in the thin film form, is important in view of its photosensitive and thermoelectric properties. Sb2S3 thin films have been spray deposited onto amorphous glass substrates using acetic acid (glacial) as a non-aqueous solvent. The films have been prepared by spraying, a mixture of equimolar SbCl3 and CS(NH2)2 dissolved in acetic acid, onto the glass substrates maintained at optimised conditions of substrate temperature (250°C) and solution concentration (0.1 M). The spray rate, during deposition of the films, was maintained to be 12 cm3 min−1. The films have been deposited with varying Sb:S volume ratio in the solution: 1:9, 2:8, 3:7, 4:6, 5:5, 6:4, 7:3, 8:2 and 9:1. The films have been characterised for their structural, optical and electrical properties. The X-ray diffraction studies reveal that the deposited material is polycrystalline Sb2S3. It has been found that as the composition of Sb increases from 1 to 4, crystallinity of the material increases continuously. It is relatively higher for 4:6 composition and continuously goes on decreasing for further subsequent compositions. The calculated lattice constants for orthorhombic crystal structure of Sb2S3 for the film deposited with composition 4:6 are a=11.18, b=11.33 and respectively. The grain size has been found to vary from 265 to 350 Å with composition. The room temperature electrical resistivity is of the order of 107–108 Ω cm. The calculated activation energy is found to be 0.86 eV for the film with composition 4:6. Optical absorption studies reveal that the material formed has a direct energy gap of 1.88 eV.
Keywords :
A. Thin films , D. Crystal structure , A. Semiconductors , A. Chalcogenides , C. X-ray diffraction
Journal title :
Journal of Physics and Chemistry of Solids
Journal title :
Journal of Physics and Chemistry of Solids