Title of article
Anisotropy of the selenium diffusion coefficient in bismuth telluride Original Research Article
Author/Authors
M Chitroub، نويسنده , , S Scherrer، نويسنده , , H Scherrer، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
9
From page
1693
To page
1701
Abstract
We present results for the anisotropic diffusion coefficient of selenium, isoelectronic impurity, in Bi2Te3 along the solidus. The single crystals were prepared by travelling heater method and they have a high crystalline quality. The experimental conditions permitted us to obtain a definite stoichiometric deviation, and diffusion profiles were obtained by SIMS. We propose a mechanism of atomic diffusion by antisite defects and thermal vacancies taking into account of the anisotropy of the diffusion coefficients.
Keywords
A. Semiconductors , D. Diffusion , D. Defects
Journal title
Journal of Physics and Chemistry of Solids
Serial Year
2000
Journal title
Journal of Physics and Chemistry of Solids
Record number
1307613
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