• Title of article

    Anisotropy of the selenium diffusion coefficient in bismuth telluride Original Research Article

  • Author/Authors

    M Chitroub، نويسنده , , S Scherrer، نويسنده , , H Scherrer، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2000
  • Pages
    9
  • From page
    1693
  • To page
    1701
  • Abstract
    We present results for the anisotropic diffusion coefficient of selenium, isoelectronic impurity, in Bi2Te3 along the solidus. The single crystals were prepared by travelling heater method and they have a high crystalline quality. The experimental conditions permitted us to obtain a definite stoichiometric deviation, and diffusion profiles were obtained by SIMS. We propose a mechanism of atomic diffusion by antisite defects and thermal vacancies taking into account of the anisotropy of the diffusion coefficients.
  • Keywords
    A. Semiconductors , D. Diffusion , D. Defects
  • Journal title
    Journal of Physics and Chemistry of Solids
  • Serial Year
    2000
  • Journal title
    Journal of Physics and Chemistry of Solids
  • Record number

    1307613