CdTe photovaltic sintered films Original Research Article

II–VI semiconductors are of great importance because of their applications in various optoelectronics, integrated optics, solar cells and electro-optic devices. CdTe is a suitable material for the fabrication of photovoltaic devices. We have prepared CdTe films in air atmosphere by the sintering method and studied for their applications in photovoltaic devices. The energy band gap of these films are determined by reflection spectrum in wavelength range 400–900 nm. The band gap of CdTe sintered films come out to be 1.46 eV. The Schottky barrier height and the ideality factor are determined by the current–voltage characteristics. The Schottky barrier height and ideality factor for the Ag/CdTe Schottky junction are found to be 0.615 V and 1.136, respectively. X-ray diffraction patterns of these films are also reported. The XRD pattern shows no peaks of CdTe oxidation.