Defect Localization using Voltage Contrast IDDQ Testing

IDDQ testing detects a majority of faults occurring in logic, ICs. Nethertheless, it has not eliminated the complex task of fault isolation at the silicon level of ICs. Liquid Crystal or Emission Microscopy can deal with this challenge. Unfortunately these two techniques lack sensitivity for some defects when the abnormal current consumption (IDDQ) remains weak. On the other hand we can use very powerful tools like the electron beam tester to deeply analyze faulty devices by internal contactless testing. In some laboratories, people have underlined the interest of merging the two techniques (IDDQ testing and Voltage Contrast) to get fast and accurate defect localization. In this paper, we will move on to the next step of identifying practical key issues necessary for obtaining results on current VLSI. © 1999 Elsevier Science Ltd. All rights reserved.