2D PHYSICAL SIMULATION OF DEGRADATION ON TRANSISTORS INDUCED BY FIB EXPOSURE OF DIELECTRIC PASSIVATION

FIB modifications are known to result in successful repairs of integrated circuits. Nevertheless, it appears necessary to understand the interaction between Ga+ FIB and integrated circuits and to be able to confirm that modifications do not induce electrical damages. In this paper, we present electrical parameter evolution of NPN bipolar transistor under FIB exposure. These experimental results allow assuming hypothesis on the physical origin of dielectric passivation degradation. Based on this hypothesis, 2D physical simulation results allow confirming the identification of the physical mechanism responsible for the DC electrical parameter degradation of bipolar transistor. © 1999 Elsevier Science Ltd. All rights reserved.