• Title of article

    Analysis of electronic structures of 3d transition metal-doped TiO2 based on band calculations Original Research Article

  • Author/Authors

    Tsutomu Umebayashi، نويسنده , , Tetsuya Yamaki، نويسنده , , Hisayoshi Itoh، نويسنده , , Keisuke Asai، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2002
  • Pages
    12
  • From page
    1909
  • To page
    1920
  • Abstract
    The electronic structures of titanium dioxide (TiO2) doped with 3d transition metals (V, Cr, Mn, Fe, Co and Ni) have been analyzed by ab initio band calculations based on the density functional theory with the full-potential linearized-augmented-plane-wave method. When TiO2 is doped with V, Cr, Mn, Fe, or Co, an electron occupied level occurs and the electrons are localized around each dopant. As the atomic number of the dopant increases the localized level shifts to lower energy. The energy of the localized level due to Co is sufficiently low to lie at the top of the valence band while the other metals produce midgap states. In contrast, the electrons from the Ni dopant are somewhat delocalized, thus significantly contributing to the formation of the valence band with the O p and Ti 3d electrons. Based on a comparison with the absorption and photoconductivity data previously reported, we show that the t2g state of the dopant plays a significant role in the photoresponse of TiO2 under visible light irradiation.
  • Keywords
    C. ab initio calculations , D. Defects , A. Oxides , D. Electronic structure , A. Semiconductors
  • Journal title
    Journal of Physics and Chemistry of Solids
  • Serial Year
    2002
  • Journal title
    Journal of Physics and Chemistry of Solids
  • Record number

    1308051