Title of article
Doping dependence of the electronic Raman spectra in cuprates Original Research Article
Author/Authors
F. Venturini، نويسنده , , M. Opel، نويسنده , , R. Hackl، نويسنده , , H. Berger، نويسنده , , L. Forr?، نويسنده , , B. Revaz، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
4
From page
2345
To page
2348
Abstract
We report electronic Raman scattering measurements on Bi2Sr2(Y12xCax)Cu2O8þd single crystals at different doping levels.
The dependence of the spectra on doping and on incoming photon energy is analyzed for different polarization geometries, in
the superconducting and in the normal state. We find the scaling behavior of the superconductivity pair-breaking peak with the
carrier concentration to be very different in B1g and B2g geometries. Also, we do not find evidence of any significant variation in
the lineshape of the spectra in the overdoped region in both symmetries, while we observe a reduction of the intensity in B2g
upon decreasing photon energies. The normal state data are analyzed in terms of the memory-function approach. The
quasiparticle relaxation rates in the two symmetries display a dependence on energy and temperature which varies with the
doping level.
Keywords
D. Superconductivity , C. Raman spectroscopy
Journal title
Journal of Physics and Chemistry of Solids
Serial Year
2002
Journal title
Journal of Physics and Chemistry of Solids
Record number
1308116
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