Explanation of the temperature variation of Hall coefficient of doped bismuth Original Research Article

The Hall effect in single crystals of bismuth doped with tin and lead has been measured in the temperature range 80 to 300 K. An attempt has been made here to explain the observed variations of Hall coefficient with temperature by considering the relative variation of the free carrier concentrations with temperature in different bands in alloys of bismuth in addition to variation of other parameters. Calculations have been made to see the effect of the overlap on Hall coefficient for different values of band overlap. The experimental curves are in satisfactory agreement with the theoretical calculations.