• Title of article

    Defect chemistry and semiconducting properties of titanium dioxide: III. Mobility of electronic charge carriers☆ Original Research Article

  • Author/Authors

    T. Bak، نويسنده , , J. Nowotny *، نويسنده , , M. Rekas، نويسنده , , C.C. Sorrell، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    19
  • From page
    1069
  • To page
    1087
  • Abstract
    The present work performs quantitative analysis of the electrical conductivity data reported in the literature in terms of defect chemistry models. The analysis results in the determination of the mobility terms for electrons and electron holes leading to the following respective forms: The mobility data determined in this work were then used for verification of defect chemistry disorder models and a good agreement was revealed.
  • Keywords
    D. Defects , D. Electrical conductivity , D. Electrical properties , A. Electronic materials , D. Semiconductivity , D. Transport properties
  • Journal title
    Journal of Physics and Chemistry of Solids
  • Serial Year
    2003
  • Journal title
    Journal of Physics and Chemistry of Solids
  • Record number

    1308263