Author/Authors :
K. Sato، نويسنده , , G.A. Medvedkin، نويسنده , , T. Ishibashi، نويسنده , , S. Mitani، نويسنده , , K. Takanashi، نويسنده , , Y. Ishida، نويسنده , , N. Hamada and D.D. Sarma، نويسنده , , J. Okabayashi and O. Rader، نويسنده , , A. Fujimori، نويسنده , , T. Kamatani، نويسنده , , H. Akai، نويسنده ,
Abstract :
Heavily Mn-doped II–VI–V2 semiconductors, such as CdGeP2 and ZnGeP2 have been prepared by depositing Mn on single crystalline substrate at nearly 400 °C in an ultra high vacuum chamber. Well-defined ferromagnetic hysteresis with a saturation behavior appears in the magnetization curve up to above room temperature. The chemical states of the ZnGeP2:Mn interface has been clarified by a careful in situ photoemission spectroscopy. The as-prepared surface consists of Ge-rich, metallic Mn compound. In and below the sub-surface region, dilute divalent Mn species as precursors of the DMS phase exist. No MnP phase was observed at any stage of the depth profile. Theoretical band-calculation suggests that the system with vacancies (Cd, Vc, Mn)GeP2 or a non-stoichiometric (Cd, Ge, Mn)GeP2 are ferromagnetic and energetically stable although ferromagnetism is not stable in a stoichiometric compound (Cd, Mn)GeP2.
