Title of article :
Raman scattering under pressure in ZnGa2Se4
Original Research Article
Author/Authors :
K. Allakhverdiev، نويسنده , , F. Gashimzade، نويسنده , , T. Kerimova، نويسنده , , T. Mitani، نويسنده , , T. Naitou، نويسنده , , K. Matsuishi، نويسنده , , S. Onari، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Abstract :
The Raman scattering spectra of ZnGa2Se4 under pressure were investigated at 300 K up to 18.9 GPa. Two stages were observed in the pressure dependences of Raman bands. Such behavior in accordance with the experimental findings existing in literature and was attributed as arising due to the order–disorder phase transition in the cation sublattice.
Using the Harrison–Keatingʹs model of the lattice dynamics modified for the crystals with the tetragonal structure, the bulk modulus B and the mode-Grüneisen parameters Γi were determined for the first time. It is shown that a better agreement between the experimental and calculated values of Γi is observed, if one takes into consideration different frequency-pressure behavior for the bond-bending and the bond-stretching parameters, which determine the low- (lower than 140 cm−1) and high- (higher than 140 cm−1) frequency phonons, respectively.
Keywords :
A. Semiconductors
Journal title :
Journal of Physics and Chemistry of Solids
Journal title :
Journal of Physics and Chemistry of Solids