Title of article :
Raman scattering study of pressure-induced phase transitions in AIIB2IIIC4VI defect chalcopyrites and spinels
Original Research Article
Author/Authors :
I.M. Tiginyanu، نويسنده , , V.V. Ursaki، نويسنده , , F.J. Manj?n، نويسنده , , V.E Tezlevan، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Abstract :
AIIB2IIIC4VI defect chalcopyrites (DC) and spinels were investigated by Raman scattering spectroscopy under hydrostatic pressure up to 20 GPa. All these compounds were found to undergo a phase transition to a Raman inactive defect NaCl-type structure. The phase transition is reversible for spinels and irreversible for DC. From the analysis of the pressure behavior of Raman-active modes, it was concluded that the phase transition from spinel to NaCl-type structure is direct in MnIn2S4 and CdIn2S4, while it occurs via an intermediate LiVO2-type NaCl superstructure in MgIn2S4. The observed differences in the pressures and the paths of the pressure-induced phase transitions in AIIB2IIIC4VI compounds are discussed.
Keywords :
A. Semiconductors , C. High pressure , D. Phase transitions
Journal title :
Journal of Physics and Chemistry of Solids
Journal title :
Journal of Physics and Chemistry of Solids