Characteristics of sequentially evaporated InxGaySez thin films Original Research Article

InxGaySez thin films with In/(In+Ga) ratio between 0 and 1 have been obtained by sequential evaporation and subsequent heating in vacuum at temperatures ranging from 250 to 400 °C. The influence of the metallic ratio and heating temperature on the structural and optical properties of the evaporated layers has been established by means of X-ray diffraction analysis and spectrophotometry.