Variable-range hopping conductivity and magnetoresistance in p-type Cu2GeSe3 Original Research Article

In this work electrical conductivity σ of p-Cu2GeSe3 has been studied at low temperature. It is observed that σ follows a dependence of the form σ=σ0exp(−T0/T)1/2 in the temperature range from 80 to 125 K. This corresponds to the Efros–Shklovskii regime of the variable range hopping (VRH) conductivity. A characteristic temperature and localization radius were found from the analysis. In the temperature range, where VRH occurs, the magnetoresistance is positive. From the study of the positive magnetoresistance, parameter as the localization radius ξ the charge carriers wave function was determined. At temperature above 150 K, a negative magnetoresistance was observed.