Doping of ternary compounds CdGeAs2 and CdSnAs2 by impurities of I, II and III groups Original Research Article

Research in doping processes of ternary chalcopyrites A2B4C25 is of primary interest for several reasons. First of all, a study of the dependencies of ‘the properties of crystal vs. the concentration of impurity in melt’ decides a fundamental problem. It is a check on the theory of ordering of a crystal structure for some specifically defined values of dopant concentration leading to a possible phase transformation caused by the self-organization of large-scale fluctuations in a melt. On the other hand, it is necessary also for practical tasks—for example, obtaining high-resistance CdGeAs2-crystals for use in nonlinear optics. In the present work data on electrical activity and on an effect in the electrophysical properties of ternary semiconductors CdGeAs2 and CdSnAs2 are obtained for dopants of Au, Cu, Zn, In, Sc and Gd in CdGeAs2 and for Au, Cu and In in CdSnAs2, added to a melt during synthesis or recrystallization of a material.