Growth of Cu(In,Ga)S2 on Si(100) substrates by multisource evaporation Original Research Article

Cu(In,Ga)S2 films were grown on Si(100) by vacuum evaporation using the constituent elementary substances as sources. It was found from X-ray diffraction studies that orientational growth occurred in a limited temperature region. The chalcopyrite structure was confirmed by studying RHEED patterns. The existence of c-axis growth, two kinds of a-axis growth and four kinds of {112} twins which can be classified as two symmetrical pairs is proposed.