Growth and characterization of p-type AgInS2 crystals Original Research Article

AgInS2 crystals have been grown at below melting point by using a Hot-Press method. The samples grown at 400∼600 °C under 10 MPa pressure were found to contain AgIn5S8. Occurrence of this phase decreased with increasing growth temperatures and at 700 °C a sample containing only the AgInS2 phase was successfully obtained. Furthermore, the elemental compositions were found to become increasingly stoichiometric with increasing temperature. We also found that conduction type could be changed from n to p-type by Sb-doping, perhaps as a result of the substitution defect of Sb atoms on the S site.