Title of article :
Use of diethylselenide as a less-hazardous source for preparation of CuInSe2 thin films by selenization of metal precursors Original Research Article
Author/Authors :
T. Yamamoto، نويسنده , , M. Nakamura، نويسنده , , J. Ishizuki، نويسنده , , T. Deguchi، نويسنده , , S. ANDO، نويسنده , , H. Nakanishi، نويسنده , , S.F. Chichibu، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
4
From page :
1855
To page :
1858
Abstract :
A less-hazardous and low cost selenization method for the preparation of CuInSe2 films was demonstrated using diethylselenide [(C2H5)2Se:DESe] as a Se source alternative to H2Se. By using N2 as a carrier gas, potential H2 leakage risk was removed from our previous work [J. Cryst. Growth 243 (2002) 404]. The structural and optical properties of CuInSe2 films fabricated by this method were found to be almost equal to those of the films prepared by the selenization process using DESe/H2 system.
Keywords :
C. X-ray diffraction , D. Luminescence , D. Optical properties , A. Semiconductors , B. Crystal Growth
Journal title :
Journal of Physics and Chemistry of Solids
Serial Year :
2003
Journal title :
Journal of Physics and Chemistry of Solids
Record number :
1308385
Link To Document :
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