Structural and optical characterization of Sb-doped CuInS2 thin films grown by vacuum evaporation method Original Research Article

Structural, electrical and optical properties of Sb-doped CuInS2 thin films grown by single source thermal evaporation method were studied. The films were annealed from 100 to 500 °C in air after the evaporation. The X-ray diffraction spectra indicated that polycrystalline CuInS2 films were successfully obtained by annealing above 200 °C. This temperature was lower than that of non-doped CuInS2 films. Furthermore, We found that the Sb-doped CuInS2 thin films became close to stoichiometry in comparison with non-doped CuInS2 thin films. The Sb-doped samples annealed above 200 °C has bandgap energy of 1.43–1.50 eV.