• Title of article

    Evaluation of P-HEMT MMIC technology PH25 for space applications

  • Author/Authors

    Huguet، P. نويسنده , , Auxemery، P. نويسنده , , Pataut، G. نويسنده , , Garat، F. نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1999
  • Pages
    -1048
  • From page
    1049
  • To page
    0
  • Abstract
    The evaluation of the P-HEMT technology PH25 according to the European Space Agency requirements is presented. The reliability assessment plan features high temperature storage tests, DC life-tests and RF life-tests, performed on a set of evaluation test vehicles specifically defined for this purpose. The results of these tests evidence a temperature activated wear-out mechanism, a very low sensitivity of PH25 on strong RF stress and no sensitivity on hydrogen. Failure rates calculations are in line with the space programme requirements. © 1999 Elsevier Science Ltd, All rights reserved.
  • Keywords
    Electromigration , Microstructural analysis , Resistance measurements , Aluminum alloys
  • Journal title
    MICROELECTRONICS RELIABILITY
  • Serial Year
    1999
  • Journal title
    MICROELECTRONICS RELIABILITY
  • Record number

    13086