Thermoelectric properties of Bi–Sb semiconducting alloys prepared by quenching and annealing Original Research Article

Bi100−xSbx (x=8–17) alloys were prepared by direct melting of constituent elements, which was followed by quenching and annealing. The synthesis of high-homogeneity alloys was confirmed by X-ray diffraction, differential thermal analyses and electron microprobe analysis. The semiconducting and thermoelectric properties of the samples were investigated by measuring Hall coefficient, electrical resistivity and Seebeck coefficient in the temperature range from 20 to 300 K for both the as-quenched and annealing samples. The properties change gradually with the Sb concentration x, which is attributed to the variation of the energy gap. The Hall mobility was enhanced by annealing, which leads to a small electrical resistivity and a large Seebeck coefficient. Consequently, large values of about 8.5 mW/mK2 for the power factor were obtained in the annealed alloys of x=8,12, and 14.