Title of article :
Growth of the Bi2O3 thin films under atmospheric pressure by means of halide CVD Original Research Article
Author/Authors :
T. Takeyama، نويسنده , , N. Takahashi، نويسنده , , T. Nakamura، نويسنده , , S. Ito، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
4
From page :
1349
To page :
1352
Abstract :
Films of Bi2O3 were grown on glass substrate under atmospheric pressure by means of halide chemical vapour deposition (AP-HCVD) using BiI3 and O2 as the starting materials. In the XRD diffractogram of the film a strong diffraction peak appears at 27.91° assigned to the (111) diffraction of the δ-Bi2O3 with cubic structure. X-ray pole figure suggested that the 〈111〉 direction of the film is perpendicular to the substrate surface, while the 〈110〉 axis directs towards all directions parallel to the substrate surface. It is for the first that δ-Bi2O3 film was prepared on glass substrate.
Keywords :
A. Thin films
Journal title :
Journal of Physics and Chemistry of Solids
Serial Year :
2004
Journal title :
Journal of Physics and Chemistry of Solids
Record number :
1308699
Link To Document :
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