Title of article
Effects of RF life-test on LF electrical parameters of GaAs power MESFETs
Author/Authors
Maneux، C. نويسنده , , Danto، Y. نويسنده , , Huguet، P. نويسنده , , Auxemery، P. نويسنده , , Garat، F. نويسنده , , Saysset-Malbert، N. نويسنده , , Lambert، B. نويسنده , , LabaV، N. نويسنده , , Touboul، A. نويسنده , , Vandamme، L.K.J. نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
-1060
From page
1061
To page
0
Abstract
ton-implanted power MESFETs have been submitted to RF life-test under gain compression. Devices went through RF life-test with no significant dynamic performance drift but with DC parameter evolution. A complete electrical characterisation performed by low frequency gate and drain noise analysis combined with drain current transient spectroscopy revealed that no degradation has occurred in the channel. An increase by two orders of magnitude of the LF gate noise level points out a degradation located in the vicinity of the gate. © 1999 Elsevier Science Ltd. All rights reserved.
Keywords
Microstructural analysis , Aluminum alloys , Resistance measurements , Electromigration
Journal title
MICROELECTRONICS RELIABILITY
Serial Year
1999
Journal title
MICROELECTRONICS RELIABILITY
Record number
13090
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