Title of article :
Conduction behaviour and thermoelectric power of Agx (As0.4Se0.6) 100−x chalcogenide system Original Research Article
Author/Authors :
A.M. Ahmed، نويسنده , , N.M. Megahid، نويسنده , , M.M. Wakkad، نويسنده , , A.K. Diab، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
7
From page :
1274
To page :
1280
Abstract :
Chalcogenide bulk alloys of Agx (As0.4Se0.6) 100−x (x=5, 7.5, 10, 12.5, 15 and 17.5) system were prepared by the conventional melt-quench technique. The d.c. electrical conductivity (σ) and thermoelectric power (TEP) measurements were carried out in the temperature range from 83 to 373 K and from 253 to 373 K, respectively. Variations of both σ and TEP with ambient temperature proved the p-type semiconducting behaviour of these materials. The current density-electric field characteristics were found to be linear. The activation energies, calculated from both the electrical conductivity Eσ and thermoelectric power Es, were found to be dependent on composition.
Keywords :
Ionic conductivity , XRD , Mott parameters , Activation energy , Seebeck coefficient , Agx(As0.4Se0.6)100?x , D. Electrical conductivity
Journal title :
Journal of Physics and Chemistry of Solids
Serial Year :
2005
Journal title :
Journal of Physics and Chemistry of Solids
Record number :
1309015
Link To Document :
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