Title of article
Density of states effective mass of n-type CuInSe2 from the temperature dependence of Hall coefficient in the activation regime Original Research Article
Author/Authors
S.M. Wasim، نويسنده , , L. Essaleh، نويسنده , , C. Rinc?n، نويسنده , , G. Mar?n، نويسنده , , J. Galibert، نويسنده , , J. Leotin، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
4
From page
1887
To page
1890
Abstract
The Hall coefficient R H of n-type CuInSe2 single crystals is measured between 10 and 300 K in pulsed magnetic field up to 35 T. The threshold field B th, above which the magnetic freezeout starts to occur, varies linearly with temperature. From the analysis of the temperature dependence of electron concentration in the activation regime above 100 K at different field values, it is established that the density of states effective mass View the MathML sourceme∗=(0.090±0.001)me is independent of the magnetic field B and the activation energy ED, above around 6 T, varies as B1/3. Similar B1/3 dependence of the magnetoresistance in the high magnetic field regime, reported earlier in the same material, suggests that theoretical work that could explain this coincidence is needed.
Keywords
D. Transport properties , D. Magnetic properties , A. Semiconductors , A. Electronic materials
Journal title
Journal of Physics and Chemistry of Solids
Serial Year
2005
Journal title
Journal of Physics and Chemistry of Solids
Record number
1309145
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