• Title of article

    Density of states effective mass of n-type CuInSe2 from the temperature dependence of Hall coefficient in the activation regime Original Research Article

  • Author/Authors

    S.M. Wasim، نويسنده , , L. Essaleh، نويسنده , , C. Rinc?n، نويسنده , , G. Mar?n، نويسنده , , J. Galibert، نويسنده , , J. Leotin، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2005
  • Pages
    4
  • From page
    1887
  • To page
    1890
  • Abstract
    The Hall coefficient R H of n-type CuInSe2 single crystals is measured between 10 and 300 K in pulsed magnetic field up to 35 T. The threshold field B th, above which the magnetic freezeout starts to occur, varies linearly with temperature. From the analysis of the temperature dependence of electron concentration in the activation regime above 100 K at different field values, it is established that the density of states effective mass View the MathML sourceme∗=(0.090±0.001)me is independent of the magnetic field B and the activation energy ED, above around 6 T, varies as B1/3. Similar B1/3 dependence of the magnetoresistance in the high magnetic field regime, reported earlier in the same material, suggests that theoretical work that could explain this coincidence is needed.
  • Keywords
    D. Transport properties , D. Magnetic properties , A. Semiconductors , A. Electronic materials
  • Journal title
    Journal of Physics and Chemistry of Solids
  • Serial Year
    2005
  • Journal title
    Journal of Physics and Chemistry of Solids
  • Record number

    1309145