Title of article :
Density of states effective mass of n-type CuInSe2 from the temperature dependence of Hall coefficient in the activation regime Original Research Article
Author/Authors :
S.M. Wasim، نويسنده , , L. Essaleh، نويسنده , , C. Rinc?n، نويسنده , , G. Mar?n، نويسنده , , J. Galibert، نويسنده , , J. Leotin، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
4
From page :
1887
To page :
1890
Abstract :
The Hall coefficient R H of n-type CuInSe2 single crystals is measured between 10 and 300 K in pulsed magnetic field up to 35 T. The threshold field B th, above which the magnetic freezeout starts to occur, varies linearly with temperature. From the analysis of the temperature dependence of electron concentration in the activation regime above 100 K at different field values, it is established that the density of states effective mass View the MathML sourceme∗=(0.090±0.001)me is independent of the magnetic field B and the activation energy ED, above around 6 T, varies as B1/3. Similar B1/3 dependence of the magnetoresistance in the high magnetic field regime, reported earlier in the same material, suggests that theoretical work that could explain this coincidence is needed.
Keywords :
D. Transport properties , D. Magnetic properties , A. Semiconductors , A. Electronic materials
Journal title :
Journal of Physics and Chemistry of Solids
Serial Year :
2005
Journal title :
Journal of Physics and Chemistry of Solids
Record number :
1309145
Link To Document :
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