Growth of ZnInGaS4 by normal freezing method Original Research Article

The crystal structure and phase transition of ZnInGaS4 were described. The ZnInGaS4 had both a defect chalcopyrite and a layered structure below 920 °C, and only the layered structure ZnInGaS4 existed between 920 and 1020 °C. The layered structure ZnInGaS4 was grown using the normal freezing method. The bandgap of the layered structure ZnInGaS4 was estimated to be approximately 2.6 eV and it is possibly a direct bandgap. This is a first step toward realizing the novel functions of ZnInGaS4.