• Title of article

    X-ray Raman scattering at the Si LII,III-edge of bulk amorphous SiO Original Research Article

  • Author/Authors

    C. Sternemann، نويسنده , , J.A. Soininen، نويسنده , , M. Volmer، نويسنده , , A. Hohl، نويسنده , , G. Vanko، نويسنده , , S. Streit، نويسنده , , James M. Tolan، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2005
  • Pages
    4
  • From page
    2277
  • To page
    2280
  • Abstract
    X-ray Raman spectra of bulk amorphous SiO have been measured at energy losses around the Si LII,III-edges for different momentum transfers at beamline ID16 of ESRF. The spectra are compared with measurements of the LII,III-edges of Si powder and with results of first-principles calculations for Si and α-quartz SiO2. Indications of sub-oxidic contributions to the LII,III-edges are found in the experiment and discussed with respect to the model of interface clusters mixture in bulk amorphous SiO.
  • Keywords
    A. Amorphous materials
  • Journal title
    Journal of Physics and Chemistry of Solids
  • Serial Year
    2005
  • Journal title
    Journal of Physics and Chemistry of Solids
  • Record number

    1309229