Title of article
X-ray Raman scattering at the Si LII,III-edge of bulk amorphous SiO Original Research Article
Author/Authors
C. Sternemann، نويسنده , , J.A. Soininen، نويسنده , , M. Volmer، نويسنده , , A. Hohl، نويسنده , , G. Vanko، نويسنده , , S. Streit، نويسنده , , James M. Tolan، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
4
From page
2277
To page
2280
Abstract
X-ray Raman spectra of bulk amorphous SiO have been measured at energy losses around the Si LII,III-edges for different momentum transfers at beamline ID16 of ESRF. The spectra are compared with measurements of the LII,III-edges of Si powder and with results of first-principles calculations for Si and α-quartz SiO2. Indications of sub-oxidic contributions to the LII,III-edges are found in the experiment and discussed with respect to the model of interface clusters mixture in bulk amorphous SiO.
Keywords
A. Amorphous materials
Journal title
Journal of Physics and Chemistry of Solids
Serial Year
2005
Journal title
Journal of Physics and Chemistry of Solids
Record number
1309229
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