Tracer diffusion of Cu in CVD β-SiC Original Research Article

Tracer diffusion coefficients of 67Cu and 64Cu in CVD β -Silicon carbide (β -SiC) have been measured in the temperature range between 623 and 1373 K by use of a serial ion-beam sputter-microsectioning technique. The temperature dependence of the diffusion coefficient D is expressed by View the MathML sourceDCu*=8.2-0.5+0.5×10-16exp(-41±1kJmol-1/RT)m2s-1. The diffusion coefficient of Cu in β-SiC is larger than those of Si and C by more than six orders of magnitude and those of Fe and Cr by one–three orders of magnitude. The activation energy for the diffusion of Cu is about one twentieth of that for the self-diffusion. The results suggest that an interstitial mechanism operates on the diffusion of Cu in β-SiC. Corresponding author contact information Corresponding author. Tel.:+81 222 153463; fax: +81 222 153465. 1 Present address: Institute for Materials Research, Tohoku University, Katahira 2-1-1, Sendai 980-8577, Japan. 2 Present address: Nippon Yakin Kogyo Co. Ltd., Kawasaki 210-0823, Japan. 3 Present address: Fuji Heavy Industries Ltd., Ooizumi 370-0514, Japan. 4 Present address: Chiyoda Corporation, Yokohama 230-8601, Japan. 5 Present address: Department of Materials Science and Engineering, Faculty of Engineering, Iwate University, Morioka 020-8551, Japan.