Author/Authors :
Niefeng Sun، نويسنده , , Luhong Mao، نويسنده , , Weidong Mao، نويسنده , , Hezou Wang، نويسنده , , Xiang Wu، نويسنده , , Keyun Bi، نويسنده , , Zhengping Zhao، نويسنده , , Weilian Guo، نويسنده , , Xiawan Wu، نويسنده , , Xiaolong Zhou، نويسنده , , Bingke Chen، نويسنده , , Yanjun Zhao، نويسنده , , Kewu Yang، نويسنده , , Tongnian Sun، نويسنده ,
Abstract :
Positron lifetime measurements have been carried out on liquid-encapsulated Czochralski-grown undoped InP samples sliced from the middle part of ingots over the temperature range 10–300 K. And at 70 K, the spectra have been measured in darkness, under illumination of infrared LED, and with illumination off is one sample. The measurements at low temperature reveal different concentration of hydrogen indium vacancy complex VInH4 in these samples. A relatively higher concentration of VInH4 in samples grown from P-rich undoped InP melts can be shown. The increase of resistivity of these samples can be speculated when temperature is low enough.
